STMicroelectronics to build the world’s first fully integrated silicon carbide facility in Italy, targets to start production in 2026 ( newsroom.st.com )

- New high-volume 200mm silicon carbide manufacturing facility for power devices and modules, as well as test and packaging, to be built in Catania, Italy
- Projected 5 billion euros multi-year investment program including 2 billion euros support provided by the State of Italy in the framework of the EU Chips Act
- Catania Silicon Carbide Campus realizes ST’s plan for fully vertically integrated SiC capabilities from R&D to manufacturing, from substrate to module, on one site, enabling automotive and industrial customers in their shift to electrification and higher energy efficiency

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, announces a new high-volume 200mm silicon carbide (“SiC”) manufacturing facility for power devices and modules, as well as test and packaging, to be built in Catania, Italy.Combined with the SiC substrate manufacturing facility being readied on the same site,these facilities will form ST’s Silicon Carbide Campus, realizing the Company’s vision of a fully vertically integrated manufacturing facility for the mass production of SiC on one site.The creation of the new Silicon Carbide Campus is a key milestone to support customers for SiC devices across automotive, industrial and cloud infrastructure applications, as they transition to electrification and seek higher efficiency.

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The Silicon Carbide Campus will serve as the center of ST’s global SiC ecosystem, integrating all steps in the production flow, including SiC substrate development, epitaxial growth processes, 200mm front-end wafer fabrication and module back-end assembly, as well as process R&D, product design, advanced R&D labs for dies, power systems and modules, and full packaging capabilities. This will achieve a first of a kind in Europe for the mass production of 200mm SiC wafers with each step of the process – substrate, epitaxy & front-end, and back-end – using 200 mm technologies for enhanced yields and performances.

The new facility is targeted to start production in 2026 and to ramp to full capacity by 2033, with up to 15,000 wafers per week at full build-out. The total investment is expected to be around five billion euros, with a support of around two billion euros provided by the State of Italy within the framework of the EU Chips Act. Sustainable practices are integral to the design, development, and operation of the Silicon Carbide Campus to ensure the responsible consumption of resources including water and power.